Lifetime and diffusion length of photogenerated minority carriers in single-crystalline n-type β-FeSi2 bulk
نویسندگان
چکیده
منابع مشابه
Temperature controlled Lévy flights of minority carriers in photoexcited bulk n-InP
We study the spatial distribution of minority carriers arising from their anomalous photon-assisted diffusion upon photo-excitation at an edge of n-InP slab for temperatures ranging from 300K to 78K. The experiment provides a realization of the “Lévy flight” random walk of holes, in which the Lévy distribution index γ is controlled by the temperature. We show that the variation γ(T ) is close t...
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Heterostructure bipolar transistor with enhanced forward diffusion of minority carriers
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We study the photoluminescence spectra of n-doped InP bulk wafers, both in the reflection and the transmission geometries relative to the excitation beam. From the observed spectra we estimate the spatial distribution of minority carriers allowing for the spectral filtering due to reabsorption of luminescence in the wafer. This distribution unambiguously demonstrates a non-exponential drop-off ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2008
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2929744